
一、个人简况
张敏,女,理学博士,教授,博士生导师。
二、教育经历
2004/09–2010/01,内蒙古大学,物理系,博士
2001/09–2004/06,内蒙古大学,物理系,硕士
1991/09–1995/07,内蒙古大学,物理系,学士
三、工作经历
2016/01- 至今, 内蒙古师范大学,物理与电子信息学院,教授
2011/12-2015/12,内蒙古师范大学,物理与电子信息学院,副教授
2010/09-2011/06,北京大学物理学院,访问学者
2006/11-2011/12,内蒙古师范大学,物理与电子信息学院,讲师
2004/09-2006/11,内蒙古师范大学,物理与电子信息学院,助教
四、教学情况
承担本科生“电磁学”“固体物理”“计算物理”“半导体物理”“半导体物理”以及“大学物理”等课程。
五、研究领域
主要从事新能源材料物理特性的理论研究,重点涉及低维半导体材料在新能源领域(如:太阳能电池、光催化剂等)的结构设计与物理性能的调控计算与分析。在新型材料的设计及物理性能计算方面具有丰富的经验。在 Nanoscale,、J. Phys. Chem. C、 J. Phys. D、无机材料学报等期刊上发表论文 40余篇,出版学术专著 1部。
六、荣誉奖励
1. 内蒙古师范大学第十一届科研成果一等奖;
2. 内蒙古师范大学第十一届科研成果三等奖;
3. 北京大学访问学者优秀科研成果奖;
4. 2022年,内蒙古自治区优秀硕士论文指导教师;
5. 2020年,内蒙古自治区优秀硕士论文指导教师;
七、主持的科研项目
1. 主持,国家自然(地区)科学基金项目,11364030,AlGaN基光偏振调制和深紫外发光机理研究,2014/01-2017/12,经费:50万
2. 主持,国家自然(专项)科学基金项目,11047018,InGaN/GaN纳米线异质结构的受限激子态及带间光跃迁,2011/01-2013/12,经费:15万
3. 主持,内蒙古自然科学基金项目,2024MS01004,新型二维非铅钙钛矿能源材料的设计与性能调控,2024/01-2026/12,经费:10万
4. 主持,内蒙古自然科学基金项目,2020MS01009,二维InSe及其异质结的电子结构和光催化性能的调控研究,2020/01-2022/12,经费:10万
5. 主持,内蒙古自然科学基金项目,2015MS0127,ZnO基纳米线异质结中的激子态问题研究,2015/01-2017/12,经费:3万
6. 主持,内蒙古自然科学基金项目,InGaN合金半导体的发光机制,2010BS0101,2010/01-2012/12,经费:3万
7. 主持,内蒙古自治区直属高校基本科研项目,二维非铅钙钛矿光伏材料的设计与性能调控,2023JBZD006,经费:15万
八、研究成果(论文,专著,专利,其他)
(1) Li, Kai, Min Zhang*, and Jun-Jie Shi. Two-dimensional YOBiS2 with Narrow Bandgap and High Carrier Mobility for Infrared Photodetector. Physics Letters A , 2025, 529: 130062.
(2) Hao Wang, Xiaowei Yang, Lihong Bao*, Yuyang Zong, Yuxin Gao, Qi Miao, Min Zhang*, Ruguang Ma*, Jijun Zhao. Nanocrystalline transition metal tetraborides as efficient electrocatalysts for hydrogen evolution reaction at the large current density[J]. Journal of Colloid and Interface Science, 2025, 677: 967-975.
(3) Shaoqiang Wei, Ran Zhao, Wenbo Yu, Lei Li* and Min Zhang*. Boosting the Electrocatalytic Oxygen Reduction Activity of MnN4−Doped Graphene by Axial Halogen Ligand Modification[J]. Molecules. 2024, 29(15): 3517.
(4) 才文文,贺勇, 张敏*, 史俊杰. AZrX3(A=Ba, Ca; X=S, Se, Te)钙钛矿结构及光电特性的第一性原理研究[J]. 材料导报, 2023, 37(2): 21070076.
(5) He Y, Zhu Y, Zhang M*, et al. High hydrogen production in the InSe/MoSi2N4 van der Waals heterostructure for overall water splitting[J]. Physical Chemistry Chemical Physics, 2022, 24(4): 2110-2117.
(6) Wang Kai-qi, He, Yong, Zhang, Min*, Shi, Jun-jie, Cai, Wen-wen. Promising Lead-Free Double-Perovskite Photovoltaic Materials Cs2MM ' Br6 (M = Cu, Ag, and Au; M ' = Ga, In, Sb, and Bi) with an Ideal Band Gap and High Power Conversion Efficiency[J]. Journal of Physical Chemistry C, 2021, 125(38): 21160-21168.
(7) Zhong H, Liu S, Cen Y, Zhang M*, et al. Layered Dion–Jacobson-Type Chalcogenide Perovskite CsLaM2X7 (M= Ta/Nb; X= S/Se) with a Narrow Band Gap of∼ 1eV as a Promising Rear Cell for All-Perovskite Tandem Solar Cells[J]. ACS Applied Materials & Interfaces, 2021, 13(41): 48971-48980.
(8) Guo W, Zhu Y, Zhang M*, et al. The Dion–Jacobson perovskite CsSbCl4: a promising Pb-free solar-cell absorber with optimal bandgap∼ 1.4 eV, strong optical absorption∼ 105cm-1, and large power-conversion efficiency above 20%[J]. Journal of Materials Chemistry A, 2021, 9(30): 16436-16446.
(9) 赵宇鹏, 贺勇, 张敏*, 史俊杰. 新型二维Zr2CO2/InSe异质结可见光催化产氢性能的第一性原理研究, 无机材料学报, 2020, 9: 993-998.
(10) 赵宇鹏, 贺勇, 张敏*, 等. 非金属掺杂二维 ZnS 的磁性和光学性质的第一性原理研究[J]. 材料导报, 2020, 34(10): 10013-10017.
(11) Y. He, M. Zhang*, J.J. Shi, Two-dimensional g-C3N4/InSe heterostructure as a novel visible-light photocatalyst for overall water splitting: a first-principles study, J. Phys. D: Appl. Phys., 2019, 52(1): 015304.
(12) Y. He, M. Zhang*, J.J. Shi, Improvement of visible-light photocatalytic efficiency in a novel InSe/Zr2CO2 hetero- structure for overall water splitting, J. Phys. Chem. C ,2019, 123(20): 12781-12790.
(13) Y. M. Ding, J. J. Shi C. X. Xia, Min Zhang*, Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure, Nanoscale, 2017, 9(38): 14682-14689.
(14) M. Zhang*, J.J. Shi, Influence of temperature and internal electric field on light emission in wurtzite GaN/AlGaN nanowire heterostructures, Optoelectronics and Advanced Materials-Rapid Communications, 2017, 11(1-2): 36-41.
(15) Min Zhang*, Junjie Shi, Influence of pressure on donor bound exciton states in wurtzite InGaN/GaN quantum dot nanowire heterostructures, Optoelectronics and Advanced Materials-Rapid Communications, 2015, 9(5-6): 641-645.
(16) Zhang Min and Shi Jun-jie*, Electronic structure and magnetic properties of substitutional transition-metal atoms in GaN nanotubes, Chin. Phys. B, 2014, 23(1): 017301.
(17) Min Zhang and Jun-jie Shi*, Donor bound excitons confined in wurtzite InGaN/GaN quantum dot nanowire heterostructures, International Journal of Modern Physics B, 2013, 27(32): 1350186.
(18) Min Zhang and Jun-jie Shi*, Influence of pressure on exciton states and interband optical transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization and dielectric mismatch. J. Appl. Phys., 2012, 111(11):113516.
(19) Min Zhang and Jun-jie Shi*, Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures: Effects of hydrostatic pressure, Physica E, 2011, 43(6):1281-1287.
(20) Min Zhang and Jun-jie Shi*, Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects, Journal of Luminescence, 2011, 131(9):1908-1912.
(21) Min Zhang and Jun-jie Shi*, Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures, Superlattices and Microstructures, 2011, 50(5):529-538.
(22) Zhang Min and Ban S.L.*, Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction. Chin. Phys. B, 2009, 18(10): 4449-4455.
(23) Zhang Min and Ban S.L.*, Screening influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction under pressure. Chin. Phys. B, 2009, 18(12):5437-5442.
电子邮箱:zhangm@imnu.edu.cn