一、个人概况
张敏，女，汉族，理学博士，内蒙古师范大学物理与电子信息学院教授，博士生导师。主要从事新能源材料物理特性的第一性原理计算，重点涉及半导体材料在新能源领域（如：太阳能电池、光催化剂等）的结构设计与物理性能的调控计算与分析。在新型材料的设计及物理性能计算方面具有丰富的经验，在 Journal of Rare Earths 、Nanoscale、J. Phys. Chem. C、 J. Phys. D、Journal of Materials Chemistry C等期刊上发表论文50余篇，出版学术专著 1部。承担本科生“电磁学”、“固体物理”、“计算物理”、“半导体物理”、“大学物理”等课程的教学任务。
通讯地址：内蒙古师范大学（盛乐校区）物理与电子信息学院
邮 箱：zhangm@imnu.edu.cn
二、教育经历
2004/09–2010/01，内蒙古大学，物理系，博士
2001/09–2004/06，内蒙古大学，物理系，硕士
1991/09–1995/07，内蒙古大学，物理系，学士
三、工作经历
2016/01－ 至今， 内蒙古师范大学，物理与电子信息学院，教授；
2011/12－2015/12，内蒙古师范大学，物理与电子信息学院，副教授；
2010/09－2011/06，北京大学物理学院，访问学者；
2006/11－2011/12，内蒙古师范大学，物理与电子信息学院，讲师；
2004/09－2006/11，内蒙古师范大学，物理与电子信息学院，助教；
三、荣誉奖励
1. 内蒙古师范大学第十一届科研成果一等奖；
2. 内蒙古师范大学第十一届科研成果三等奖；
3. 2020年度和2022年度内蒙古自治区优秀硕士学位论文指导教师
4. 北京大学访问学者优秀科研成果奖
四、科研项目
1. 国家自然（地区）科学基金项目，62164010, 采用胺-硫醇溶液体系制备高效率的铜钒硒 薄膜太阳能电池, 2022/01-2025/12, 参与，35万元
2. 国家自然（地区）科学基金项目，11364030，AlGaN基光偏振调制和深紫外发光机理研究，2014/01-2017/12，主持；50万
3. 国家自然（专项）科学基金项目，11047018，InGaN/GaN纳米线异质结构的受限激子态及带间光跃迁，2011/01-2013/12，主持；15万
4. 内蒙古自然科学基金项目，2024MS01004，新型二维非铅钙钛矿能源材料的设计与性能调控，2024/01-2026/12，主持；10万
5. 内蒙古自然科学基金项目，2020MS01009，二维InSe及其异质结的电子结构和光催化性能的调控研究，2020/01-2022/12，主持；10万
6. 内蒙古自然科学基金项目，2015MS0127，ZnO基纳米线异质结中的激子态问题研究，2015/01-2017/12，主持；3万
7. 内蒙古自然科学基金项目，InGaN合金半导体的发光机制，2010BS0101，2010/01-2012/12，主持；3万
8. 国家自然科学基金面上项目，51072007，无序对InGaN量子阱/纳米线异常发光性质的影响，2011/01-2013/12，合作；
五、代表性论文
(1) Kai Li, Yuqi Zhang, Min Zhang*, Zhifeng Liu. AOBiX2 (A = La, Tb, Lu; X = S, Se): a family of 2D narrow bandgap semiconductors with high stability, broad-spectrum response, flexibility and high carrier mobility. 10.1016/j.jre.2025.08.010
(2) Yuqi Zhang, Kai Li, Min Zhang* and Lei Li*. Exploring novel anti-perovskites X4A2O (X = K, Rb, Cs; A = Cl, Br, I) with excellent photoelectric performance towards photovoltaic applications. Journal of Materials Chemistry C, 2025, 13:12837.
(3) Li Kai, Min Zhang*, and Jun-Jie Shi. "Two-dimensional YOBiS2 with Narrow Bandgap and High Carrier Mobility for Infrared Photodetector." Physics Letters A , 2024, 529: 130062.
(4) Wang Hao, Xiaowei Yang, Lihong Bao*, Yuyang Zong, Yuxin Gao, Qi Miao, Min Zhang*, Ruguang Ma, and Jijun Zhao. Nanocrystalline transition metal tetraborides as efficient electrocatalysts for hydrogen evolution reaction at the large current density[J]. Journal of Colloid and Interface Science, 2025, 677: 967-975.
(5) Shaoqiang Wei, Ran Zhao, Wenbo Yu, Lei Li* and Min Zhang*. Boosting the Electrocatalytic Oxygen Reduction Activity of MnN4−Doped Graphene by Axial Halogen Ligand Modification[J]. Molecules. 2024, 29(15): 3517.
(6) 才文文，贺勇, 张敏*, 史俊杰. AZrX3(A=Ba, Ca; X=S, Se, Te)钙钛矿结构及光电特性的第一性原理研究[J]. 材料导报, 2023, 37(2): 21070076.
(7) Zhong H, Liu S, Cen Y, Zhang M*, et al. Layered Dion–Jacobson-Type Chalcogenide Perovskite CsLaM2X7 (M= Ta/Nb; X= S/Se) with a Narrow Band Gap of∼ 1eV as a Promising Rear Cell for All-Perovskite Tandem Solar Cells[J]. ACS Applied Materials & Interfaces, 2021, 13(41): 48971-48980.
(8) He Y, Zhu Y, Zhang M*, et al. High hydrogen production in the InSe/MoSi2N4 van der Waals heterostructure for overall water splitting[J]. Physical Chemistry Chemical Physics, 2022, 24(4): 2110-2117.
(9) Guo W, Zhu Y, Zhang M*, et al. The Dion–Jacobson perovskite CsSbCl4: a promising Pb-free solar-cell absorber with optimal bandgap∼ 1.4 eV, strong optical absorption∼ 105cm-1, and large power-conversion efficiency above 20%[J]. Journal of Materials Chemistry A, 2021, 9(30): 16436-16446.
(10) Wang Kai-qi, He, Yong, Zhang, Min*, Shi, Jun-jie, Cai, Wen-wen. Promising Lead-Free Double-Perovskite Photovoltaic Materials Cs2MM ' Br6 (M = Cu, Ag, and Au; M ' = Ga, In, Sb, and Bi) with an Ideal Band Gap and High Power Conversion Efficiency[J]. Journal of Physical Chemistry C, 2021, 125(38): 21160-21168.
(11) 赵宇鹏, 贺勇, 张敏*, 史俊杰. 新型二维Zr2CO2/InSe异质结可见光催化产氢性能的第一性原理研究, 无机材料学报, 2020, 9: 993-998.
(12) Y. He, M. Zhang*, J.J. Shi, Two-dimensional g-C3N4/InSe heterostructure as a novel visible-light photocatalyst for overall water splitting: a first-principles study, J. Phys. D: Appl. Phys., 2019, 52(1): 015304.
(13) Y. He, M. Zhang*, J.J. Shi, Improvement of visible-light photocatalytic efficiency in a novel InSe/Zr2CO2 hetero- structure for overall water splitting, J. Phys. Chem. C ,2019, 123(20): 12781-12790.
(14) Y. M. Ding, J. J. Shi C. X. Xia, Min Zhang*, Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure, Nanoscale, 2017, 9(38): 14682-14689.
(15) M. Zhang*, J.J. Shi, Influence of temperature and internal electric field on light emission in wurtzite GaN/AlGaN nanowire heterostructures, Optoelectronics and Advanced Materials-Rapid Communications, 2017, 11(1-2): 36-41.
(16) Min Zhang*, Junjie Shi, Influence of pressure on donor bound exciton states in wurtzite InGaN/GaN quantum dot nanowire heterostructures, Optoelectronics and Advanced Materials-Rapid Communications, 2015, 9(5-6): 641-645.
(17) Zhang Min and Shi Jun-jie*, Electronic structure and magnetic properties of substitutional transition-metal atoms in GaN nanotubes, Chin. Phys. B, 2014, 23(1): 017301.
(18) Min Zhang and Jun-jie Shi*, Donor bound excitons confined in wurtzite InGaN/GaN quantum dot nanowire heterostructures, International Journal of Modern Physics B, 2013, 27(32): 1350186.
(19) Min Zhang and Jun-jie Shi*, Influence of pressure on exciton states and interband optical transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization and dielectric mismatch. J. Appl. Phys., 2012, 111(11):113516.
(20) Min Zhang and Jun-jie Shi*, Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures: Effects of hydrostatic pressure, Physica E, 2011, 43(6):1281-1287.
(21) Min Zhang and Jun-jie Shi*, Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects, Journal of Luminescence, 2011, 131(9):1908-1912.
(22) Min Zhang and Jun-jie Shi*, Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures, Superlattices and Microstructures, 2011, 50(5):529-538.
(23) Zhang Min and Ban S.L.*, Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction. Chin. Phys. B, 2009, 18(10): 4449-4455.
(24) Zhang Min and Ban S.L.*, Screening influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction under pressure. Chin. Phys. B, 2009, 18(12):5437-5442.